Analysis of on-state carrier distribution in the DI-LIGBT
作者： Ravishankar Sunkavalli , B.Jayant Baliga
DOI: 10.1016/S0038-1101(96)00247-X
关键词: Conductivity modulation 、 Analytical chemistry 、 Common emitter 、 Silicon 、 Optoelectronics 、 Voltage drop 、 Materials science
摘要: Abstract The on-state carrier distribution in the drift region of DI-LIGBT with thin silicon layers is studied this paper. Numerical simulations indicate that enhancement due to formation an accumulation underneath gate near emitter has a strong impact on distribution. This results improved characeristics by reducing middle voltage drop, enhanced conductivity modulation region. A simple one-dimensional analytical modeling carried out study effect drop. are verified measurements performed DI-LIGBTs fabricated 5 and 10 μm thick layers.
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