Transmission Line Analysis of Accumulation Layer in IEGT
作者： Jin-Woo Moon , Sang-Koo Chung
DOI: 10.5370/JEET.2011.6.6.824
关键词:
摘要: Transmission line analysis of the surface accumulation layer in injection-enhanced gate transistor (IEGT) is presented for first time, based on per-unit-length resistance and conductance beneath IEGT. Lateral electric field surface, as well electron current injected into layer, governed by well-known wave equation, decreases an exponential function lateral distance from cathode. Unit-length are expressed terms device parameters applied voltage. Results obtained experiments consistent with numerical simulations.
koreascience.or.kr参考文章(8)
Jin-Woo Moon, Sang-Koo Chung, An Analytical Expression for Current Gain of an IGBT Journal of Electrical Engineering & Technology. ,vol. 4, pp. 401- 404 ,(2009) , 10.5370/JEET.2009.4.3.401
S.C. Sun, J.D. Plummer, Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors IEEE Transactions on Electron Devices. ,vol. 27, pp. 356- 367 ,(1980) , 10.1109/T-ED.1980.19868
Allen R. Hefner, David L. Blackburn, An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor Solid-State Electronics. ,vol. 31, pp. 1513- 1532 ,(1988) , 10.1016/0038-1101(88)90025-1
PM Igic, MS Towers, PA Mawby, None, A 2D physically based compact model for advanced power bipolar devices Microelectronics Journal. ,vol. 35, pp. 591- 594 ,(2004) , 10.1016/J.MEJO.2004.02.006
Tae-Dong Park, Goon-Ho Choi, Yong-Seok Cho, Ki-Heon Park, Decoupling Controller Design for H ∞ Performance Condition Journal of Electrical Engineering & Technology. ,vol. 6, pp. 874- 882 ,(2011) , 10.5370/JEET.2011.6.6.874
F. Udrea, G.A.J. Amaratunga, Theoretical and numerical comparison between DMOS and trench technologies for insulated gate bipolar transistors IEEE Transactions on Electron Devices. ,vol. 42, pp. 1356- 1366 ,(1995) , 10.1109/16.391221
Jin-Woo Moon, Yearn-Ik Choi, Sang-Koo Chung, Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor Solid-state Electronics. ,vol. 49, pp. 834- 837 ,(2005) , 10.1016/J.SSE.2005.01.025
Jinhyung Park, Hyunhun Cho, Seunghae Kim, Dowoo Park, Ahsol Kim, Joongoo Park, Adaptive Parameter Estimation Method for Wireless Localization Using RSSI Measurements Journal of Electrical Engineering & Technology. ,vol. 6, pp. 883- 887 ,(2011) , 10.1007/978-3-642-22309-9_29