A 2D physically based compact model for advanced power bipolar devices
作者： PM Igic , MS Towers , PA Mawby , None
DOI: 10.1016/J.MEJO.2004.02.006
关键词:
摘要: Abstract A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to the complex 2D nature of these devices, ambipolar diffusion equation has been solved simultaneously different boundary conditions associated with areas device. The IEGT incorporated into SABER simulator and tested standard double-pulse switching test circuit. established a 4500 V–1500 flat pack TOSHIBA IEGT.
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sci-hub.se 参考文章(5)
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