Characteristics of 5‐eV absorption band in sputter deposited GeO2‐SiO2thin glass films

作者: Junji Nishii , Hiroshi Yamanaka , Hideo Hosono , Hiroshi Kawazoe

DOI: 10.1063/1.111181

关键词: Molar absorptivityAbsorption spectroscopySputteringThin filmAnalytical chemistryDopingIrradiationMaterials scienceAnnealing (metallurgy)Absorption bandOptics

摘要: Thin films (4.6 μm thick) of 5 GeO2‐95 SiO2 and 55 GeO2‐45 (mol %) glasses were prepared by rf sputtering method in an Ar‐O2 atmosphere. An intense absorption band at around eV was distinctly observed both after the as‐deposited annealed 350 °C for 30 min a vacuum. A part this 5‐eV gradually decreased UV irradiation. Saturated absorptivity changes (−Δα∞) bleached component, which is considered to be origin Hill gratings [K. O. Hill, Y. Fujii, B. S. Kawasaki, Appl. Phys. Lett. 32, 647 (1978)] second‐harmonic generation glass fibers doped with GeO2, prolonged irradiation 50 cm−1 400 films. These values are greater one or two orders magnitude than those (∼2 cm−1) bulk germanosilicate vapor axial deposition method.

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