Comparison of formation process of ultraviolet induced color centers in GeO2SiO2 glass fiber preform and Ge-implanted SiO2
作者： Junji Nishii , Akiyoshi Chayahara , Kohei Fukumi , Kanenaga Fujii , Hiroshi Yamanaka
DOI: 10.1016/0168-583X(96)00027-4
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摘要: Abstract Photochemical reactions induced by ultraviolet (UV) excimer lasers were investigated for a 10GeO 2 90SiO (mol%) glass fiber preform and SiO implanted with Ge + ions (1 × 10 16 cm −2 ) the electron spin resonance (ESR) optical absorption. Electron trapped centers associated fourfold coordinated ion (GEC) formed in former irradiation KrF laser (5 eV) or ArF (6.3 pulses. The concentration of GECs increased as square power, which means that formation reaction GEC proceeds via two-photon absorption process. Si E′ (·SiO 3 , full width at half maximum (FWHM) = G) peroxy radicals (PORs: SiOO · O − we ions, could be bleached UV prolonged isochronal annealing. exposure annealed to pulses having identical FWHM observed as-implanted glass. No UV-induced ESR signal related was confirmed before after intense bands both glasses, should cause positive index change.
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