General model of the transverse dielectric constant of GaAs-AlAs superlattices

摘要: Abstract A general model of the transverse dielectric constant GaAs-AlAs superlattices is presented. The based on treating separately individual contributions from Λ, X, and L valleys, enabling us to understand better trends overall constant. An accurate k · p band calculation used determine bulk structure around three symmetry points a realistic Kronig-Penney calculate influence superlattice periodicity structure. resulting shows small polarization effect due anisotropy superstructure large amount fine corresponding different transitions between quantized levels. barrier well thicknesses, LB LZ, respectively, also important it shown that for value x =LB/(LB+LZ), real part zero frequency increases as function LB. Finally, parts constants AlGaAs alloy, characterized by same , are compared found at slightly larger with difference increasing higher frequencies.