摘要: The doping of a quantum dot is an important issue particularly because the luminescence of porous silicon has been attributed to quantum confinement. Since electrochemical etching …
harvard.edu
scitation.org
aip.org
sci-hub.se 参考文章(16)
G. Bastard, Hydrogenic impurity states in a quantum well: A simple model Physical Review B. ,vol. 24, pp. 4714- 4722 ,(1981) , 10.1103/PHYSREVB.24.4714
J. M. Luttinger, W. Kohn, Motion of Electrons and Holes in Perturbed Periodic Fields Physical Review. ,vol. 97, pp. 869- 883 ,(1955) , 10.1103/PHYSREV.97.869
K.B. Kahen, J.P. Leburton, K. Hess, General model of the transverse dielectric constant of GaAs-AlAs superlattices Superlattices and Microstructures. ,vol. 1, pp. 289- 294 ,(1985) , 10.1016/0749-6036(85)90088-6
John P. Walter, Marvin L. Cohen, Wave-Vector-Dependent Dielectric Function for Si, Ge, GaAs, and ZnSe Physical Review B. ,vol. 2, pp. 1821- 1826 ,(1970) , 10.1103/PHYSREVB.2.1821
R. Tsu, L. Ioriatti, J. F. Harvey, H. Shen, R. A. Lux, Quantum Confinement Effects on the Dielectric Constant of Porous Silicon MRS Proceedings. ,vol. 283, pp. 437- ,(1992) , 10.1557/PROC-283-437
Davorin Babić, Raphael Tsu, Richard F. Greene, Ground-state energies of one- and two-electron silicon dots in an amorphous silicon dioxide matrix. Physical Review B. ,vol. 45, pp. 14150- 14155 ,(1992) , 10.1103/PHYSREVB.45.14150
David R. Penn, Wave-Number-Dependent Dielectric Function of Semiconductors Physical Review. ,vol. 128, pp. 2093- 2097 ,(1962) , 10.1103/PHYSREV.128.2093
V. Lehmann, U. Gösele, Porous silicon formation: A quantum wire effect Applied Physics Letters. ,vol. 58, pp. 856- 858 ,(1991) , 10.1063/1.104512
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561
R. Tsu, H. Shen, M. Dutta, Correlation of Raman and photoluminescence spectra of porous silicon Applied Physics Letters. ,vol. 60, pp. 112- 114 ,(1992) , 10.1063/1.107364