作者: Donald Bennett Hilliard
DOI:
关键词: Excited state 、 Materials science 、 Optical cavity 、 Ultraviolet 、 Thin film 、 Plasma 、 Ionization 、 Optics 、 Etching (microfabrication) 、 Sputtering
摘要: A sputtering system for the depositing or etching of insulating, conducting, semiconducting thin films is disclosed, in which plasma irradiated with a transverse, adjustable ultraviolet emission produced by an optical cavity containing lamp discharge. The irradiates volume sufficiently high flux to enact significant changes film produced. This effect enabled device geometry, which, preferred embodiment, provides uniquely efficiency and stability coupling between discharge plasma, resulting ability significantly alter ionized excited state populations within above plasma. design also allows operator control species involved interaction. novel source materials processing disclosed.