A method of planarizing microstructures
作者： Peter B. Mumola
DOI:
关键词: Engineering drawing 、 Plasma 、 Layer (electronics) 、 Microstructure 、 Dwell time 、 Position (vector) 、 Isotropic etching 、 Materials science 、 Composite material
摘要: A method of planarizing a microstructure (16) includes the steps providing layer (18) material over such that an overcoating surface (20) is formed, measuring thickness across forming dwell time versus position map and removing from by use plasma assisted chemical etching tool in accordance with map.
lens.org 参考文章(10)
Ronald J. Schutz, Peter A. Heimann, Joseph M. Moran, Interferometric methods and apparatus for device fabrication ,(1984)
Lynn D. Bollinger, Method and apparatus for moving a material removal tool with low tool accelerations ,(1993)
Gurtej S. Sandhu, Chris C. Yu, Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection ,(1991)
Fumihide Sato, Method of leveling the laminated surface of a semiconductor substrate ,(1991)
P. Rabinzohn, C. Villalon, F. Pasqualini, S. Gourrier, High quality plasma planarization: methodology and application to maskless selective interconnection Microelectronic Engineering. ,vol. 11, pp. 599- 602 ,(1990) , 10.1016/0167-9317(90)90179-W
Yasuaki Nakazato, Yutaka Ohta, Masatake Katayama, Takao Abe, Method for controlling thickness of single crystal thin-film layer on soi substrate ,(1991)
C.B. Zarowin, L.D. Bollinger, Method to determine tool paths for thinning and correcting errors in thickness profiles of films ,(1992)
Chunghoan Kim, Planarization method for a semiconductor substrate ,(1992)
Charles B. Zarowin, L.D. Bollinger, System and method for controlling and executing the etching of a wafer ,(1992)
L.D. Bollinger, Charles B. Zarowin, System for controlling and executing the etching of a wafer ,(1992)