Sb-doped SnO2 wire: Highly stable field emitter

作者: Ashok B. Bhise , Dattatray J. Late , Pravin S. Walke , Mahendra A. More , Vijayamohanan K. Pillai

DOI: 10.1016/J.JCRYSGRO.2007.06.017

关键词: ChemistryField electron emissionCurrent (fluid)Common emitterEvaporation (deposition)Quantum tunnellingField (physics)DopingCurrent densityCondensed matter physics

摘要: Abstract Field emission investigations of a single Sb-doped SnO2 wire synthesized by thermal evaporation have been carried out in conventional field geometry under ultrahigh vacuum. An onset required to draw current 1 nA has reproducibly observed be 9.5×103 V/μm. A density 5.88×103 A/cm2 drawn with an applied 2×104 V/μm. The Fowler–Nordheim plot, obtained from the current–voltage (I–V) measurements, shows linear nature accordance quantum mechanical tunneling phenomenon. enhancement factor estimated 26,500 cm−1, indicating that is nanometric features wire. current–time (I–t) measurement high stability without severe deviations initial set value 1 μA.

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