作者: Shaveta Sharma , Rita Sharma , Praveen Kumar , R. Thangaraj , K. Asokan
DOI: 10.1007/S10854-017-7277-8
关键词: Materials science 、 Optoelectronics 、 Steady state (electronics) 、 Stretched exponential function 、 Photocurrent 、 Transient (oscillation) 、 Photoconductivity 、 Solar cell 、 Chalcogenide 、 Atomic physics 、 Raman spectroscopy
摘要: The study of steady state and transient photocurrent measurement provide important information about carrier generation recombination phenomena in various semiconducting systems for photo-sensor device applications. In the present work, composition dependent analysis photocurrents was studied thermally evaporated Se-rich InxSb30−xSe70 films average thickness 800 nm. indirect optical gap has been calculated from transmission reflection data variation molecular units Raman spectroscopy. initial rise sharply to approach a value during illumination fast decay constant persistent current after stopping observed. intensity dependence obeys power law IPh = Fγ, where exponent tells process. fitted with stretched exponential function different compositions at light intensities. These results are development low cost photo absorbers solar cell applications visible region responsive sensor devices.