Photoconductivity of amorphous As-Se-Sb thin films
作者： A. Dahshan , H.H. Amer , A.H. Moharam , A.A. Othman
DOI: 10.1016/J.TSF.2006.01.062
关键词: Chemical bond 、 Thin film 、 Band gap 、 Analytical chemistry 、 Amorphous solid 、 Carrier lifetime 、 Photoconductivity 、 Light intensity 、 Antimony 、 Chemistry 、 Mineralogy
摘要: Abstract The present paper reports the effect of replacement selenium by antimony on steady state and transient photoconductivity in vacuum evaporated amorphous thin films As 30 Se 70− x Sb ( = 2.5, 5, 7.5, 10, 12.5, 15 17.5 at.%). composition dependence at room temperature shows that increases while photosensitivity decreases with increase content. lifetime carrier increasing light intensity. This decrease suggests mechanism our samples was controlled transition trapping processes. Replacement results a monotonic band gap films. behavior interpreted basis chemical bond approach.
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