Effect of antimony impurity on photoconduction in thin films of SeTe system
作者： R.M. Mehra , Gurinder Kaur , P.C. Mathur
DOI: 10.1016/0038-1098(93)90912-7
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摘要: Abstract Effect of antimony impurity concentration on the steady state and transient photoconductivity amorphous SeTe films has been investigated by exposing material to white light. Photoconductivity is found increase with in Sb content shows a square root dependence intensity The photosensitivity decreases increasing content. Nonexponential long-term photocurrent decays have observed after ceasing illumination. results discussed basis localized-localized recombination concept differential lifetime.
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