Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films

摘要: This paper reports the dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films deposited on an Al2O3 substrate by RF magnetron sputtering. It is determined that conduction activation energy 0.417 eV for as-grown sample. Thermal quenching absent sample during testing temperature zone, but reverse true polycrystalline Photosensitivity shows maximum at 240 K films, while it higher than in range from 170 to 300 K. The recombination mechanism monomolecular process room temperature, which different low range. μτ-product 10−11−10−9cm2/V, indicates some defect states exist films.