Steady-state and transient photoconductivity in hydrogenated amorphous silicon nitride films
作者： İlker Ay , Hüseyin Tolunay
DOI: 10.1016/J.SOLMAT.2003.06.005
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摘要: Abstract Amorphous SiNx:H films were prepared by the rf glow-discharge decomposition of ammonia/silane gas mixture with varying nitrogen content. The steady-state photoconductivity and its dependence on light intensity have been investigated in a-SiNx:H as a function temperature between 100 420 K. electron drift mobility set samples has determined from their response time measurements. results suggest that was nearly unchanged for low Two containing lowest showed higher than unalloyed sample within range including room temperature.
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