Direct probing of trapped charge dynamics in SiN by Kelvin Force Microscopy
作者： E. Vianello , E. Nowak , D. Mariolle , N. Chevalier , L. Perniola
DOI: 10.1109/ICMTS.2010.5466851
关键词:
摘要: In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si–rich). The dynamics spread trapped is analyzed help three dimensional numerical device simulations.
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