The effect of the Sb content on the physical properties of amorphous Se0.75Ge0.25−y thin films

摘要: Abstract The effect of the addition varying amounts antimony in concentrations from 0.01 to 0.20 at% Se0.75Ge0.25-y glass on its dc conductivity is analysed. electrical amorphous thin films vacuum evaporated Se0.75Ge0.25-ySby were determined during and after light exposure at different temperatures. time dependence measured darkness or when exposed about room temperature has been studied for (y=0.01, 0.05, 0.10, 0.15, 0.18 0.20) compositions thicknesses. conduction activation energy ΔE pre-exponential factor σ 0 (0, T) which appear conductivities are found decrease with increasing Sb content. mean value threshold voltage, was either darkness, V th , il pronounced glass-forming tendencies alloys Se Ge discussed topologically terms chemical bonds expected be present these materials. These have used estimate cohesive energies (CE) glasses.