Ultrafast bulk carrier dynamics in various GaN crystals at near-infrared wavelengths under one- and two-photon absorption
作者： Yu Fang , Junyi Yang , Zhengguo Xiao , Xingzhi Wu , Jidong Jia
DOI: 10.1063/1.5089108
关键词: Wide-bandgap semiconductor 、 Two-photon absorption 、 Carrier lifetime 、 Excitation 、 Femtosecond 、 Electron 、 Absorption (electromagnetic radiation) 、 Materials science 、 Molecular physics 、 Ultrafast laser spectroscopy
摘要: Femtosecond transient absorption (TA) as a probe of ultrafast carrier dynamics was conducted at near-infrared wavelengths in series GaN crystals. The TA kinetics all the crystals appeared to be single exponential under one-photon (1P) excitation but biexponential two-photon (2P) excitation, which inconsistent with previous experimental reports and model predictions. Surface recombination diffusion could eliminated responses were identified phonon-assisted indirect free-carrier absorption. Modelling bulk simplified revealed that, 1P high injection level, limited by slow capture rate electrons via deep defects, while 2P low initial lifetime decreased remarkably due fast hole capturing further controlled inherent and/or dislocation concentrations.
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