Two‐step barrier diodes
作者： P. A. Schulz , C. E. T. Gonçalves da Silva
DOI: 10.1063/1.99241
关键词: Effective mass (solid-state physics) 、 Current density 、 Tunnel effect 、 Diode 、 Negative resistance 、 Heterojunction 、 Chemistry 、 Condensed matter physics 、 DC bias 、 Quantum well
摘要: Transmission probabilities and current densities of a two‐step barrier heterostructure are calculated within the effective‐mass approximation as function electron energy applied bias. This system shows negative differential resistance under forward bias, because quasibound state in triangular well, no resonance reverse density. The diode may show an ac field absence dc
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