Negative differential resistance of double barrier diodes at zero bias
作者： H. C. Liu , D. D. Coon
DOI: 10.1063/1.98251
关键词: Tunnel effect 、 Terahertz radiation 、 Condensed matter physics 、 Electrical resistivity and conductivity 、 Chemistry 、 Quantum well 、 Diode 、 Adiabatic theorem 、 Quantum tunnelling 、 Resonance (particle physics) 、 Mineralogy
摘要: Zero‐bias dc negative differential resistance of double barrier quantum well diodes in an ac field is explained. A physical picture presented terms resonant tunneling phenomena. An adiabatic approximation used limiting the present approach to applied frequencies lower than ultimate device speed which order 1 THz for AlxGa1−x As/GaAs devices.
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