摘要: Successes in the vertical and horizontal technology of semiconductor structure fabrication have opened up new possibilities for creating solid-state devices which better high-speed operating characteristics than do bipolar field-effect transistors. Modern makes it possible to produce layered structures whose thicknesses are tens nanometers less. Lowering dimensions active regions devices, roughly speaking, something less size a free electron crystal requires that we no longer think as classical particle apply quantum physics analyze their operation. Not only does concept investigation change, but principles operation electronic well.
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