Microwave and Millimeter-Wave Resonant Tunneling Diodes

摘要: Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport [1] it provides. In addition, negative differential resistance regions which exist in current-voltage (I–V) curve (peak-to- valley ratios 3.5:1 at room temperature [2–4] and nearly 10:1 77 K have been measured) suggest that high-speed devices based on peculiarities I–V should be possible. For example, region is capable providing gain necessary for high-frequency oscillations [5]. our laboratory we attempting to increase frequency power these oscillators [6], others worked toward a better understanding equivalent circuit device [7] underlying processes responsible response [8–10]. Three-terminal using resonant various ways also proposed fabricated [11–13]. this paper will describe most recent results as well some new resonant-tunneling application millimeter submillimeter-wave spectrum.