Some properties of ReSi2
作者： C. Krontiras , L. Grönberg , I. Suni , F.M. d'Heurle , J. Tersoff
DOI: 10.1016/0040-6090(88)90251-9
关键词: Inorganic compound 、 Silicon 、 Hall effect 、 Rhenium 、 Electrical resistivity and conductivity 、 Chemistry 、 Condensed matter physics 、 Characterization (materials science) 、 Mineralogy 、 Band gap 、 Thin film
摘要: Abstract Thin films of ReSi 2 were prepared by the co-evaporation rhenium and silicon. The structure is compared with previously reported this compound. resistivity Hall coefficient measured from 4.2 K to 523 K. Optical transmission measurements also carried out. display semiconducting properties (p-type) characteristic a small band gap, in agreement for bulk single-crystal samples. discrepancy between these results recent calculations, indicating potentially high conductivity, briefly discussed.
harvard.edu
elsevier.com
sci-hub.se 参考文章(35)
J. M. van Ruitenbeek, W. Joss, R. Pauthenet, O. Thomas, J. P. Senateur, R. Madar, de Haas-van Alphen effect in MoSi2. Physical Review B. ,vol. 35, pp. 7936- 7938 ,(1987) , 10.1103/PHYSREVB.35.7936
Konrad Schubert, Kristallstrukturen zweikomponentiger Phasen Springer Berlin Heidelberg. ,(1964) , 10.1007/978-3-642-94904-3
Frank J. Blatt, Physics of Electronic Conduction in Solids ,(1968)
Ch Krontiras, I Suni, F M d'Heurle, F K LeGoues, R Joshi, Electronic transport properties of thin films of WSi2 and MoSi2 Journal of Physics F: Metal Physics. ,vol. 17, pp. 1953- 1961 ,(1987) , 10.1088/0305-4608/17/9/020
V. Malhotra, Electronic transport properties of TiSi2 thin films Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 2, pp. 10- 15 ,(1984) , 10.1116/1.582905
T. L. Martin, V. Malhotra, J. E. Mahan, Electronic transport properties of tungsten silicide thin films Journal of Electronic Materials. ,vol. 13, pp. 309- 325 ,(1984) , 10.1007/BF02656682
F. Nava, K. N. Tu, E. Mazzega, M. Michelini, G. Queirolo, Electrical transport properties of transition‐metal disilicide films Journal of Applied Physics. ,vol. 61, pp. 1085- 1093 ,(1987) , 10.1063/1.338203
P. A. Badoz, E. Rosencher, J. Torres, G. Fishman, Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2 Journal of Applied Physics. ,vol. 62, pp. 890- 895 ,(1987) , 10.1063/1.339695
P. H. Woerlee, P. M. Th. M. van Attekum, A. A. M. Hoeben, G. A. M. Hurkx, R. A. M. Wolters, Observation of anomalous electrical transport properties in MoSi2 films Applied Physics Letters. ,vol. 44, pp. 876- 878 ,(1984) , 10.1063/1.94964
J. Angilello, J. E. E. Baglin, F. Cardone, J. J. Dempsey, F. M. d'Heurle, E. A. Irene, R. Maclnnes, C. S. Petersson, R. Savoy, A. P. Segmuller, E. Tierney, Tantalum silicide films deposited by DC sputtering Journal of Electronic Materials. ,vol. 10, pp. 59- 93 ,(1981) , 10.1007/BF02654902