de Haas-van Alphen effect in MoSi2.

作者: J. M. van Ruitenbeek , W. Joss , R. Pauthenet , O. Thomas , J. P. Senateur

DOI: 10.1103/PHYSREVB.35.7936

关键词: Materials science

摘要:

参考文章(3)
O. Thomas, J.P. Senateur, R. Madar, O. Laborde, E. Rosencher, Molybdenum disilicide: Crystal growth, thermal expansion and resistivity Solid State Communications. ,vol. 55, pp. 629- 632 ,(1985) , 10.1016/0038-1098(85)90827-0
O Laborde, O Thomas, J P Senateur, R Madar, Resistivity and magnetoresistance of high-purity monocrystalline MoSi2 Journal of Physics F: Metal Physics. ,vol. 16, pp. 1745- 1752 ,(1986) , 10.1088/0305-4608/16/11/014
Bijan K. Bhattacharyya, D. M. Bylander, Leonard Kleinman, Comparison of fully relativistic energy bands and cohesive energies ofMoSi2andWSi2 Physical Review B. ,vol. 32, pp. 7973- 7978 ,(1985) , 10.1103/PHYSREVB.32.7973