Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device
作者： Takeshi Yanagita , Kazuhide Yokota , Shin Iwabuchi , Yasushi Maruyama
DOI:
关键词: Solid-state 、 Electric charge 、 Electronic circuit 、 Materials science 、 Pickup 、 Optoelectronics 、 Electric field 、 Pixel 、 Saturation (magnetic) 、 Electrical engineering
摘要: A back-illuminated type solid-state image pickup device ( 1041 ) includes read circuits (Tr 1 , Tr 2 formed on one surface of a semiconductor substrate 1042 to signal from photo-electric conversion element (PD) the ), in which electric charges (e) generated region 1052 c under at least portion are collected an charge accumulation side by field within (PD). Thus, and camera able make size pixel become very small without lowering saturation amount (Qs) sensitivity.
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