Method of fabricating back-illuminated imaging sensors
作者： Mahalingam Bhaskaran , Peter Alan Pal Levine , Pradyumna Kumar Swain
DOI:
关键词: Insulator (electricity) 、 Optoelectronics 、 Semiconductor 、 Epitaxy 、 Passivation 、 Materials science 、 Wafer
摘要: A method for fabricating a back-illuminated semiconductor imaging device on semiconductor-on-insulator substrate, and resulting is disclosed The manufacturing the includes steps of providing substrate comprising an insulator layer, epitaxial layer substantially overlying layer; forming at least one bond pad region extending into to surface partially region; component layer: passivation pad, component; bonding handle wafer etching through portion expose pad.
google.de 参考文章(18)
William America, Richard Poole, Enrique Garcia, Method of fabricating high quantum efficiency solid state sensors ,(1992)
Thomas J. Cunningham, Bedabrata Pain, Structure for implementation of back-illuminated CMOS or CCD imagers ,(2005)
Bedabrata Pain, Apparatus and method of manufacture for an imager equipped with a cross-talk barrier ,(2007)
Madhav Mehra, Edmund K. Banghart, Ronald M. Gluck, Process for making backside illuminated image sensors ,(1992)
Takeshi Yanagita, Kazuhide Yokota, Shin Iwabuchi, Yasushi Maruyama, Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device ,(2010)
Martin A. Schmidt, Michael F. Miller, Process for fabricating stiction control bumps on optical membrane via conformal coating of etch holes ,(2000)
Simon M. Sze, Gary S. May, Fundamentals of Semiconductor Fabrication ,(2003)
Jr. George Melville Williams, Silicon-on-insulator active pixel sensors ,(2004)