Wavelength-resonant surface-emitting semiconductor laser
作者： S RJ Brrueck , CF Schaus , MA Osinski , JG McInerney , M Yasin
DOI:
关键词: Materials science 、 Wavelength 、 Optoelectronics 、 One half 、 Optics 、 Laser 、 Semiconductor device 、 Semiconductor laser theory 、 Active laser medium 、 Quantum well 、 Semiconductor
摘要: A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this a multiplicity quantum-well regions (1) separated by spacer (2) higher bandgap. Each period consisting one region and the adjacent chosen such that total width equal to an integral multiple half in radiation with which interacting. Optical, electron-beam electrical injection pumping This may be used as laser for single devices or arrays either without reflectors, external.
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