Monolithic semiconductor light emitter and amplifier

作者: Nils W. Carlson

DOI:

关键词: Light beamSubstrate (electronics)AmplifierMaterials scienceOpticsSemiconductorWaveguideGratingHeterojunctionQuantum wellOptoelectronics

摘要: A semiconductor light emitter comprising a substrate of material having pair opposed surfaces and body on one the surfaces. The includes clad layers opposite conductivity types an intermediate quantum well region therebetween. are which forms heterojunction with region. form waveguide extends along body. plurality gain sections formed in spaced optically coupled by waveguide. Each is adapted to generate therein when voltage placed thereacross. One section has gratings at each end thereof reflect back into thereby create beam light. grating between adjacent allow some generated pass therethrough next section. other have first sections. periods such that no self-oscillation occurs so serve as single amplifiers. also direct amplified from out

参考文章(14)
Gary A. Evans, Nils W. Carlson, Charlie J. Kaiser, Diode laser array ,(1989)
Johannes H. C. Van Heuven, Tullio E. Rozzi, Semiconductor laser or intensifier ,(1980)
S RJ Brrueck, CF Schaus, MA Osinski, JG McInerney, M Yasin, A Raja, TM Brennan, BE Hammons, Wavelength-resonant surface-emitting semiconductor laser ,(1989)
W. Streifer, R. Burnham, D. Scifres, Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides - II: Blazing effects IEEE Journal of Quantum Electronics. ,vol. 12, pp. 494- 499 ,(1976) , 10.1109/JQE.1976.1069201
D.F. Welch, D. Mehuys, R. Parke, R. Waarts, D. Scifres, W. Streifer, Coherent operation of monolithically integrated master oscillator amplifiers Electronics Letters. ,vol. 26, pp. 1327- 1329 ,(1990) , 10.1049/EL:19900856
J. M. Hammer, N. W. Carlson, G. A. Evans, M. Lurie, S. L. Palfrey, C. J. Kaiser, M. G. Harvey, E. A. James, J. B. Kirk, F. R. Elia, Phase‐locked operation of coupled pairs of grating‐surface‐emitting diode lasers Applied Physics Letters. ,vol. 50, pp. 659- 661 ,(1987) , 10.1063/1.98112