Strain-compensated multiple quantum well laser structures
作者： Yu-Hwa Lo
DOI:
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摘要: Semiconductor lasers (10) utilize strain-compensated multiple quantum wells (20) to increase gain in long wavelength (1.3 and 1.5 microns) devices. The well structures (18) contain a plurality of strained barrier (22) layers, where the layers are placed under strain equal opposite that (20). As result, normal thickness restriction on is lifted. In addition, p-doped further optical gain. Another embodiment uses grating-coupled laser (100 120). Because increased structure, grating can made surface with strong light coupling characteristic, allowing simpler fabrication shorter length laser.
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