Semiconductor laser having a multiple quantum well structure doped with impurities

摘要: In a well-known semiconductor laser, multiple quantum well type active layer consisting of barrier layers and or layers, each which has thickness less than the de Broglie wavelength electrons, is doped with an impurity, impurity density made higher in layer. Further, case where held between p-type n-type cladding undoped, part lying contact other close to put into n-conductivity while that type. Desirably, should range from about 1×1018 1×1019 cm- 3.