Model for spin-polarized transport in perovskite manganite bicrystal grain boundaries

摘要: We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics a low-angle bicrystal grain boundary junction in perovskite manganite ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_{3}$ thin film. By gradually trimming we been able to reveal nonlinear behavior latter. With use relation ${M}_{\mathrm{GB}}\ensuremath{\propto}{M}_{\mathrm{bulk}}\sqrt{{\mathrm{MR}}^{*}}$ extracted grain-boundary magnetization. Further, demonstrate that built-in potential barrier can be modeled by ${V}_{\mathrm{bi}}\ensuremath{\propto}{M}_{\mathrm{bulk}}^{2}\ensuremath{-}{M}_{\mathrm{GB}}^{2}.$ Thus our model connects with at region. The results indicate band-bending interface has magnetic origin.