High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz
作者： K. Wakita , I. Kotaka , H. Asai
DOI: 10.1109/68.124865
关键词: Optical modulator 、 Materials science 、 Bandwidth (signal processing) 、 Gallium arsenide 、 Optics 、 Phase modulation 、 Optoelectronics 、 Intensity modulation 、 Voltage 、 Optical power 、 Phase (waves)
摘要: High-speed phase modulation (in the frequency bandwidth of 20 GHz, highest yet reported for multiple quantum well (MQW) modulators) waveguided InGaAlAs/InAlAs MQW optical modulators is reported. The modulator successfully operates at a long wavelength 1-55 mu m with low required voltage shift (V pi =3.8 V), small intensity depth below 1.5 dB, and without any degradation up to GHz under high input power 0 dBm in single-mode fiber. >
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