摘要: Optoelectronics (OE) is the technology which employs semiconductor electronic and optical devices to achieve component circuit functionality, can't be achieved alone by electronics. This chapter examines OE important many areas such as signal processing. It also discusses how these work, advantages of approach, future prospects. The begins with solid state laser, one optoelectronic device that outpaces all others, both in total market share R&D investment. followed a discussion status for modifying an beam namely switches modulators. Furthermore, applications technological issues confronting integration components, integrated circuits (OEICs). In implementing pixel arrays, it possible take advantage activity III–V materials their use modulators, lasers non-linear switching elements.
elsevier.com
sci-hub.se 参考文章(156)
K. Wakita, I. Kotaka, O. Mitomi, H. Asai, Y. Kawamura, Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz IEEE Photonics Technology Letters. ,vol. 3, pp. 138- 140 ,(1991) , 10.1109/68.76867
C. Cremer, N. Emeis, M. Schier, G. Heise, G. Ebbinghaus, L. Stoll, Grating spectrograph integrated with photodiode array in InGaAsP/InGaAs/InP IEEE Photonics Technology Letters. ,vol. 4, pp. 108- 110 ,(1992) , 10.1109/68.124893
M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, T. Kawano, A. Takai, High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique IEEE Photonics Technology Letters. ,vol. 4, pp. 580- 582 ,(1992) , 10.1109/68.141974
G. lengyel, K.W. Jelley, R.W.H. Engelmann, A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures IEEE Journal of Quantum Electronics. ,vol. 26, pp. 296- 304 ,(1990) , 10.1109/3.44961
K.W. Goossen, J.E. Cunningham, W.Y. Jan, Single-layer structure supporting both heterojunction bipolar transistor and surface-normal modulator IEEE Photonics Technology Letters. ,vol. 4, pp. 393- 395 ,(1992) , 10.1109/68.127225
F.R. Beyette Jun, S.A. Feld, X. An, K.M. Geib, M.J. Hafich, G.Y. Robinson, C.W. Wilmsen, Integrated optical inverter using light amplifying optical switch (LAOS) Electronics Letters. ,vol. 27, pp. 497- 499 ,(1991) , 10.1049/EL:19910313
C.S. Harder, B. Van Zeghbroeck, H. Meier, W. Patrick, P. Vettiger, 5.2-GHz bandwidth monolithic GaAs optoelectronic receiver IEEE Electron Device Letters. ,vol. 9, pp. 171- 173 ,(1988) , 10.1109/55.679
O. Wada, T. Sakurai, T. Nakagami, Recent progress in optoelectric integrated circuits (OEIC's) IEEE Journal of Quantum Electronics. ,vol. 22, pp. 805- 821 ,(1986) , 10.1109/JQE.1986.1073053
K. Hu, L. Chen, K. Kaviani, P. Chen, A. Madhukar, All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors IEEE Photonics Technology Letters. ,vol. 4, pp. 263- 266 ,(1992) , 10.1109/68.122387
K. Wakita, I. Kotaka, H. Asai, High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz IEEE Photonics Technology Letters. ,vol. 4, pp. 29- 31 ,(1992) , 10.1109/68.124865