Nonequilibrium devices for infra-red detection
作者： T. Ashley , C.T. Elliott
DOI: 10.1049/EL:19850321
关键词: Infrared 、 Photodetector 、 Particle detector 、 Operating temperature 、 Non-equilibrium thermodynamics 、 Semiconductor device 、 Photodiode 、 Optoelectronics 、 Materials science 、 Detector 、 Electrical and Electronic Engineering
摘要: To increase the operating temperature of long-wavelength infra-red detectors it is proposed that narrow-gap semiconductor devices be operated in a nonequilibrium mode such carrier densities are held below their equilibrium, near-intrinsic, levels. The possible use exclusion photo-conductors and extraction photodiodes discussed, experimental results shown for former.
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