Quantum efficiency in InSb

作者: Alan R. Beattie

DOI: 10.1016/0022-3697(62)90122-1

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摘要: Abstract The phonon-less electron collision processes which can create electron-hole pairs are analyzed theoretically on the basis of both parabolic and non-parabolic energy bands to explain dependence quantum efficiency in InSb incident illumination. It is found that two these dominant with room temperature thresholds at photon energies 0.44 eV 0.62 eV, good agreement experimental values 0.47 0.60 eV. also qualitatively explained.

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