Electron impact ionization in semiconductors

作者: Jan Tauc

DOI: 10.1016/0022-3697(59)90321-X

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摘要: Abstract Experimental facts are presented showing that the quantum yield of inner photoelectric effect increases if photon energy exceeds a certain value. This is interpreted as due to intrinsic electron impact ionization. A theory this discussed. The relation high low parameters shown. Some other effects related ionization mentioned.

参考文章(19)
W. G. Pfann, W. Van Roosbroeck, Radioactive and Photoelectricp‐nJunction Power Sources Journal of Applied Physics. ,vol. 25, pp. 1422- 1434 ,(1954) , 10.1063/1.1721579
K. G. McKay, K. B. McAfee, Electron Multiplication in Silicon and Germanium Physical Review. ,vol. 91, pp. 1079- 1084 ,(1953) , 10.1103/PHYSREV.91.1079
K. G. McKay, Avalanche Breakdown in Silicon Physical Review. ,vol. 94, pp. 877- 884 ,(1954) , 10.1103/PHYSREV.94.877
P. A. Wolff, Theory of Electron Multiplication in Silicon and Germanium Physical Review. ,vol. 95, pp. 1415- 1420 ,(1954) , 10.1103/PHYSREV.95.1415
S. L. Miller, Ionization Rates for Holes and Electrons in Silicon Physical Review. ,vol. 105, pp. 1246- 1249 ,(1957) , 10.1103/PHYSREV.105.1246
A. G. Chynoweth, K. G. McKay, Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon Physical Review. ,vol. 108, pp. 29- 34 ,(1957) , 10.1103/PHYSREV.108.29
S. L. Miller, Avalanche Breakdown in Germanium Physical Review. ,vol. 99, pp. 1234- 1241 ,(1955) , 10.1103/PHYSREV.99.1234
Jiří Drahokoupil, Marie Malkovská, Jan Tauc, Quantum efficiency of the photo-electric effect in germanium for x-rays Czechoslovak Journal of Physics. ,vol. 7, pp. 57- 64 ,(1957) , 10.1007/BF01688713