Structural and frequency-dependent dielectric properties of PVP-SiO2-TMSPM hybrid thin films
作者： Maryam Shahbazi , Ali Bahari , Shahram Ghasemi
DOI: 10.1016/J.ORGEL.2016.02.012
关键词: Scanning electron microscope 、 Dielectric loss 、 Analytical chemistry 、 Electrical resistivity and conductivity 、 Thin film 、 Dissipation factor 、 Fourier transform infrared spectroscopy 、 Spin coating 、 Dielectric 、 Materials science
摘要: Abstract In the present study, thin films of PVP-SiO2-TMSPM (polyvinylpyrrolidone-silicon dioxide- 3-trimethoxysilyl propyl metacrylate) were deposited on p-type Si (111) substrates using spin coating technique. Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and energy dispersive spectrometry (EDS) applied to investigate chemical bonds structural properties samples. Morphology hybrid was studied atomic force microscopy (AFM) scanning electron (SEM) techniques. The frequency dependence dielectric such as constant (e′), loss (e″), tangent (tan δ) well real component electric modulus (M′), imaginary (M″), AC electrical conductivity (σAC) in Al/PVP-SiO2-TMSPM/P used a metal-polymer-semiconductor (MPS) device. Analysis relaxation behavior performed range 0.1 KHz 1 MHz. 1 KHz 1 MHz, σAC data varied from 6.35 × 10−6 9.02 × 10−6 for sample with 0.15 wt ratios TMSPM equivalent values both PVP SiO2. dielectric, modulus, analyses considered useful factors detect effects capacitance, ionic conductivity, process.
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