Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature
作者： Selçuk Demirezen
DOI: 10.1007/S00339-013-7605-7
关键词: Dielectric 、 Schottky diode 、 Analytical chemistry 、 Dissipation factor 、 Schottky barrier 、 Dielectric loss 、 Materials science 、 Doping 、 Electrical resistivity and conductivity 、 Diode 、 General Materials Science 、 General chemistry
摘要: In this study, frequency and voltage dependence of dielectric constant (e′), loss (e″), tangent (tanδ), the real imaginary parts electric modulus (M′ M″) ac electrical conductivity (σac) an Au/PVA (Bi-doped)/n-Si Schottky barrier diode have been investigated in detail by using experimental C–V G–V measurements wide range 5 kHz–10 MHz ±2 V at room temperature. Experimental results indicate that values e′,e″, tanδ σac are strongly dependent. It has found e′,e″ decrease while σac, M′ M″ increase. is clear show a distinctive peak with U-shape its position shifts towards positive-bias region increasing frequency. Such behavior can be attributed to particular distribution interface states located Si/PVA interfacial polarization. concluded polarization charge easily follow signal low frequencies.
springer.com
harvard.edu
sci-hub.se 参考文章(36)
Mihai Popescu, Ion Bunget, Physics of Solid Dielectrics ,(1984)
Larry L. Hench, J. K. West, Principles of electronic ceramics ,(1990)
Nawazish A. Khan, M. Mumtaz, A. A. Khurram, Frequency dependent dielectric properties of Cu0.5Tl0.5Ba2Ca2Cu3−yZnyO10−δ (y=0, 1.0, 1.5,2.0, 2.5) superconductors Journal of Applied Physics. ,vol. 104, pp. 033916- ,(2008) , 10.1063/1.2967823
C.Y. Liu, T.Y. Tseng, Correlation between deep depletion and current–voltage saturation of SrTiO3 gate dielectric capacitor Ceramics International. ,vol. 30, pp. 1101- 1106 ,(2004) , 10.1016/J.CERAMINT.2003.12.020
R.K. Gupta, K. Ghosh, P.K. Kahol, Fabrication and electrical characterization of Au/p-Si/STO/Au contact Current Applied Physics. ,vol. 9, pp. 933- 936 ,(2009) , 10.1016/J.CAP.2008.09.007
Habibe Uslu, Şemsettin Altındal, Tuncay Tunç, İbrahim Uslu, Tofig S. Mammadov, The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes Journal of Applied Polymer Science. ,vol. 120, pp. 322- 328 ,(2011) , 10.1002/APP.33131
S. Kar, S. Varma, Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination Journal of Applied Physics. ,vol. 58, pp. 4256- 4266 ,(1985) , 10.1063/1.335561
I.M. Afandiyeva, M.M. Bülbül, Ş. Altındal, S. Bengi, Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier Microelectronic Engineering. ,vol. 93, pp. 50- 55 ,(2012) , 10.1016/J.MEE.2011.05.041
İlke Taşçıoğlu, Umut Aydemir, Şemsettin Altındal, Barış Kınacı, Süleyman Özçelik, Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range Journal of Applied Physics. ,vol. 109, pp. 054502- ,(2011) , 10.1063/1.3552599
M. Mumtaz, Nawazish A. Khan, Dielectric response of Cu0.5Tl0.5Ba2(Ca2−yMgy)(Cu0.5Zn2.5)O10−δ bulk superconductor to frequency and temperature Physica C-superconductivity and Its Applications. ,vol. 469, pp. 182- 187 ,(2009) , 10.1016/J.PHYSC.2009.01.010