Contribution of EUV resist counting statistics to stochastic printing failures

摘要: Background: Stochastic printing failures, manifested as random defects in a patterned photoresist image, result from statistical fluctuations photon flux and resist components are key issue confronting extreme ultraviolet (EUV) lithography. Empirical data indicate that composition processing influence stochastic failure rates. Aim: To devise simple flexible model framework for assessing how changes imaging chemistry can be expected to impact the frequency of failures Approach: A physicochemical description based solely on component statistics is combined with combinatorial calculations Monte Carlo analysis estimate rates failures. Results: This yields results consistent experimental observations. The method applied predict impacts formulation, composition, process failures. Conclusions: approach provides rapid assessment relative materials modifications useful tool advance EUV design.