Non-volatile semiconductor memory device allowing fast verifying operation

作者: Akira Hosogane , Tomoshi Futatsuya , Motoharu Ishii , Hiroaki Nakai , Shinichi Kobayashi

DOI:

关键词: Threshold voltageTransistorComputer hardwareLine (text file)Semiconductor memoryReset (computing)Transfer (computing)Computer scienceVoltageMemory cell

摘要: A bit line reset transistor resets every second of a plurality lines to be write-verified. At this time, transfer gate disconnects column latch from the unreset line. Then, is precharged in accordance with data latch, while applying verify voltage word source grounds line, and connected so that corresponding value threshold memory cell held by write verifying operation performed.

参考文章(2)
Tomoshi Futatsuya, Yoshikazu Miyawaki, Takeshi Nakayama, Shinichi Kobayashi, Yasushi Terada, Masanori Hayashikoshi, Nonvolatile semiconductor memory device and data erasing method thereof ,(1991)
Tomoharu Tanaka, Masaki Momodomi, Yoshiyuki Tanaka, Kazunori Ohuchi, Hideki Sumihara, Yoshihisa Iwata, Koji Sakui, Shinji Saito, Electrically erasable programmable read-only memory with write/verify controller ,(1994)