Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm

摘要: The growth of the InAs(N) quantum dots on GaAs in a reduced-pressure reactor metal-organic chemical vapor deposition (MOCVD) is studied. As nitrogen source, dimethylhydrazine used. It currently well-known that temperature InGaAs should be limited order to avoid undesirable In and Ga interdiffusion as well reevaporation In. However, thick barrier layers grown at elevated because pronounced effect optical quality structure. An increase substrate holder by 100°C requires interrupting process MOCVD for approximately 2 min. time this interruption rise can come various stages process, namely, (i) after growing prior coating layer, (ii) during (iii) layer before (iv) layer. shown last variant most appropriate structures with intense photoluminescence 1.3 μm. case, thin initial part under reduced temperature.