Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
作者： G Saint-Girons , G Patriarche , L Largeau , J Coelho , A Mereuta
DOI: 10.1016/S0022-0248(01)01817-6
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摘要: The growth of InGaAs/GaAs quantum dots (QDs) emitting around 1.3 μm by low-pressure metal-organic vapor-phase epitaxy has been studied transmission electronic microscopy and photoluminescence spectroscopy. Adjusting the encapsulating GaAs thickness deposited on QDs before temperature ramping step from low to higher barriers allows desorption dislocated clusters formed simultaneously with optically active coherent QDs. extended defect-free array obtained this method presents an improved efficiency, is suitable for multiple arrays stacking.
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