Pushing Multiple Patterning in Sub-10nm: Are We Ready? (Invited Paper)
作者： Bei Yu , David Z. Pan , Yibo Lin , Xiaoqing Xu , Lars Liebmann
DOI:
关键词: Engineering drawing 、 Semiconductor industry 、 Physical design 、 Multiple patterning lithography 、 Computer architecture 、 Multiple patterning 、 Decomposition problem 、 Engineering 、 Extreme ultraviolet lithography 、 Integrated circuit layout
摘要: Due to elongated delay of extreme ultraviolet lithography (EUVL), the semiconductor industry has been pushing 193nm immersion lithopgrahy using multiple patterning print critical features in 22nm/14nm technology nodes and beyond. Multiple (MPL) poses many new challenges both mask design IC physical design. The layout decomposition problem extensively studied, rst on double patterning, then triple or even quadruple patterning. Meanwhile, studies have shown that it is very important consider MPL implications at early stages so overall manufacturing closure can be reached. In this paper, we provide a comprehensive overview state-of-the-art research results for MPL, from synergistic synthesis We will also discuss open problems as sub-10nm.
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