Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment

摘要: An absorber layer may be formed on a substrate using atomic deposition reactions. containing elements of groups IB, IIIA and VIB by placing in treatment chamber performing group IB element and/or one or more from separate sources onto to form film. A VIA is then incorporated into the film annealed layer. The greater than about 25 nm thick. coiled coils such way that adjacent turns do not touch another. placed where substantially an entire surface substrates treated process. One deposited stoichiometrically controlled ratio self limiting