Time of flight study of low pressure laser etching of silicon by chlorine
作者： J. Boulmer , B. Bourguignon , J.P. Budin , D. Debarre
DOI: 10.1016/0169-4332(89)90250-X
关键词: Laser 、 Chloride 、 Analytical chemistry 、 Silicon 、 Monolayer 、 Etching (microfabrication) 、 Chlorine 、 Chamber pressure 、 Chemistry 、 Time of flight
摘要: Abstract We have studied c-Si etching by chlorine and an XeCl laser. Cl 2 is supplied a pulsed valve, allowing large etch rates under very low chamber pressure. The products are using double time-of-flight measurement in which product velocities masses determined independently. For laser fluences ranging from 500 to 1000 mJ cm -2 doses 8 x 10 15 18 , the rate constant nearly equal half Si monolayer per pulse. experimental findings compatible with two-step mechanism, namely chemisorption (with no required) desorption of chloride species.
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