Mechanistic studies of photoinduced reactions at semiconductor surfaces

作者: Lee J. Richter , Richard R. Cavanagh

DOI: 10.1016/0079-6816(92)90022-A

关键词: NanotechnologyEtchingDesorptionAbsorption (electromagnetic radiation)AdsorptionSemiconductorChemistryPhotoexcitationExcitationSubstrate (electronics)

摘要: Abstract Photoinduced reactions at semiconductor surfaces and interfaces have recently come under intense study. This activity is motivated both by the potential technological importance of photoinduced device processing fascinating complexity underlying science. The basic mechanisms which photons can drive surface/interface be categorized into direct excitation an ambient species, adsorbed or indirect via absorption within substrate. We summarize essential aspects these then review recent studies that focused on identifying photoexcitation mechanism. encompasses molecular desorption from, metal deposition on, oxidation etching Si GaAs substrates.

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