The thermal decomposition of triethylgallium on GaAs(100)
作者： A.J. Murrell , A.T.S. Wee , D.H. Fairbrother , N.K. Singh , J.S. Foord
DOI: 10.1016/0042-207X(90)93832-4
关键词: Adsorption 、 X-ray photoelectron spectroscopy 、 Thermal decomposition 、 Thermal desorption 、 Desorption 、 Triethylgallium 、 Hydrogen 、 Decomposition 、 Chemistry 、 Inorganic chemistry
摘要: Abstract The adsorption and thermal decomposition of triethylgallium (TEG) on GaAs has been studied using desorption XPS techniques. Pure Ga films are deposited when adsorbed TEG layers heated in a reaction which competes with diethylgallium (DEG) desorption. Ethene, ethene hydrogen detected as the products overall cracking reaction.
harvard.edu
elsevier.com
sci-hub.se 参考文章(4)
T.H. Chiu, J.E. Cunningham, A. Robertson, Surface chemical kinetics during the growth of GaAs by chemical beam epitaxy Journal of Crystal Growth. ,vol. 95, pp. 136- 139 ,(1989) , 10.1016/0022-0248(89)90366-7
D. J. Frankel, High-resolution electron-energy-loss spectroscopy studies of GaAs (100) surfaces Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 5, pp. 1113- 1118 ,(1987) , 10.1116/1.583738
A. Robertson, T. H. Chiu, W. T. Tsang, J. E. Cunningham, A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy Journal of Applied Physics. ,vol. 64, pp. 877- 887 ,(1988) , 10.1063/1.342508
P D Dapkus, Metalorganic Chemical Vapor Deposition Annual Review of Materials Science. ,vol. 12, pp. 243- 269 ,(1982) , 10.1146/ANNUREV.MS.12.080182.001331