Selective area growth for opto-electronic integrated circuits (OEICs)
作者： G.J. Davies , W.J. Duncan , P.J. Skevington , C.L. French , J.S. Foord
DOI: 10.1016/0921-5107(91)90154-N
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摘要: Abstract Selective area epitaxy (SAE) is emerging as an important technology in the fabrication of optoelectronic integrated circuits. This paper reviews current growth technologies for their applicability to process SAE. It discusses detail interaction on masked with adjoining epitaxial window. The minimization features formed by this whilst optimizing selectivity seen main aim processes.
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