Selective area growth of III–V compound semiconductors by chemical beam epitaxy
作者： G.J. Davies , P.J. Skevington , C.L. French , J.S. Foord
DOI: 10.1016/0022-0248(92)90420-N
关键词:
摘要: Abstract The reactions of triethylgallium (TEG) on a silicon nitride surface have been investigated to determine the underlying causes for selective area epitaxy. Using techniques X-ray photo electron spectroscopy and temperature programmed desorption, TEG is found weakly adsorb defect sites at room temperature. Desorption favoured over further decomposition higher substrate temperatures. results are compared with interaction GaAs(100) implications influence arsenic growth discussed.
harvard.edu
elsevier.com
sci-hub.se 参考文章(11)
C.T. Foxon, B.A. Joyce, Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique Surface Science. ,vol. 50, pp. 434- 450 ,(1975) , 10.1016/0039-6028(75)90035-7
D.A. Andrews, M.A.Z. Rejman-Greene, B. Wakefield, G.J. Davies, Selective area growth of indium phosphide based heterostructures by metalorganic molecular beam epitaxy Journal of Crystal Growth. ,vol. 95, pp. 167- 170 ,(1989) , 10.1016/0022-0248(89)90374-6
H. Heinecke, A. Brauers, F. Grafahrend, C. Plass, N. Pütz, K. Werner, M. Weyers, H. Lüth, P. Balk, Selective growth of GaAs in the MOMBE and MOCVD systems Journal of Crystal Growth. ,vol. 77, pp. 303- 309 ,(1986) , 10.1016/0022-0248(86)90316-7
O. Kayser, Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE Journal of Crystal Growth. ,vol. 107, pp. 989- 998 ,(1991) , 10.1016/0022-0248(91)90592-S
A. J. Murrell, A. T. S. Wee, D. H. Fairbrother, N. K. Singh, J. S. Foord, G. J. Davies, D. A. Andrews, Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100) Journal of Applied Physics. ,vol. 68, pp. 4053- 4063 ,(1990) , 10.1063/1.346242
Eisuke Tokumitsu, Yoshimitsu Kudou, Makoto Konagai, Kiyoshi Takahashi, Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source Journal of Applied Physics. ,vol. 55, pp. 3163- 3165 ,(1984) , 10.1063/1.333344
W.T. Tsang, Current status review and future prospects of CBE, MOMBE and GSMBE Journal of Crystal Growth. ,vol. 107, pp. 960- 968 ,(1991) , 10.1016/0022-0248(91)90588-V
Naoki Furuhata, Akihiko Okamoto, Selective growth mechanism of GaAs in metalorganic molecular beam epitaxy Journal of Crystal Growth. ,vol. 112, pp. 1- 6 ,(1991) , 10.1016/0022-0248(91)90905-K
D. A. Andrews, M. A. Z. Rejman‐Greene, B. Wakefield, G. J. Davies, Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy Applied Physics Letters. ,vol. 53, pp. 97- 98 ,(1988) , 10.1063/1.100360
G.J. Davies, W.J. Duncan, P.J. Skevington, C.L. French, J.S. Foord, Selective area growth for opto-electronic integrated circuits (OEICs) Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 9, pp. 93- 100 ,(1991) , 10.1016/0921-5107(91)90154-N