Reaction mechanisms governing the selected-area growth of III-V semiconductors by chemical beam epitaxy

摘要: The molecular surface chemistry underlying the selected-area growth of III-V semiconductors by chemical beam epitaxy is reviewed. Homoepitaxial occurs efficiently because high reactive sticking probabilities group III precursor, and efficient reaction pathways resulting in conversion initial chemisorbed species into elemental Ga on semiconductor surface. In contrast it shown that probability triethyl gallium dielectric masks employed vanishingly low, any free produced become trapped an inert oxidized form within layers. As a result production metallic does not occur, hence observed. interaction between when adsorbed mask has also been examined. increases brings about direct which results formation GaAs.